Available gases are: SF6, C4F8, CHF3, O2, Ar, N2, CF4, CH2F2, C2F6, and He.įor recipes and materials specific etch rate information you can view our process development file. Machine is controlled by a PC2000 software. The first mode is etching by SF6 followed by wall passivation which is achieved through polymerization of C4F8 on the side walls of the etched features, protecting it from further etching and allowing the next etch step to be directional. PlasmaLab system 100 PECVD (Plasma Enhanced Chemical Vapour Deposition), made by Oxford Instruments, is a multipurpose tool capable of depositing silicon oxide, silicon nitride, amorphous silicon, and other films (under staff permission). The DRIE system uses the Bosch process which is a pulsed etching alternating repeatedly between two modes to achieve vertical pattern. For other materials dry etch please use the Oxford PlasmaLab 80 ICP. 6.55 (oxfordpecvd4) Oxford Plasmalab System 100 PECVD System 6.56 (parylene) Parylene Deposition System 2010 Labcoater 2 6.
#OXFORD PLASMALAB SYSTEM 100 FREE#
The CNI Fl DRIE etch system is a metal free system dedicated for silicon, silicon oxide, and silicon nitride etch.
DC bias can be applied to the substrate to increase directionality of ions into the substrate. This technique allows fabrication of high aspect ratio silicon features with vertical sidewalls The Cobra ICP etch sources produce a high density of reactive species at relatively low pressure values. Inductively Coupled Plasma (ICP) etching is a technique which uses a radio frequency (RF) energy coupled into a low pressure gas by an inductive coil mounted on the outside of a quartz window.
0 kommentar(er)
